This document is the datasheet of IPA60R385CP, which details the features and characteristics of this product.
The IPA60R385CP is a CoolMOS® power transistor offered in a PG‑TO220 package. It is designed for hard‑switching SMPS topologies and features ultra‑low gate charge, high peak current capability and RoHS‑compliant Pb‑free lead plating.
The document provides maximum ratings, thermal and electrical characteristics, dynamic switching parameters, typical output curves and package dimensions, along with legal and safety notices from Infineon Technologies AG.
| Continuous drain current (Id) | 9.0 A |
|---|---|
| Pulsed drain current (Ipp) | 27 A |
| Drain‑source breakdown voltage (Vds) | 600 V |
| On‑state resistance (Rds(on)) | 0.35 Ω (typ) |
| Gate threshold voltage (Vgs(th)) | 2.5 V (typ) |
| Input capacitance (Ciss) | 790 pF |
| Output capacitance (Coss) | 38 pF |
| Total gate charge (Qg) | 17‑22 nC |
| Avalanche energy (single pulse) | 227 mJ |
| Package | PG‑TO220 |
The device can handle a continuous drain current of 9.0 A at 25 °C.
The breakdown voltage is rated at 600 V.
Yes, it uses Pb‑free lead plating and is RoHS compliant.
It is supplied in a PG‑TO220 (TO‑220) package.