The IPW50R250CP CoolMOSTM Power Transistor is a power switch that features the lowest RON x Qg and ultra-low gate charge, can withstand extreme dv / dt, has high peak current capability, is RoHS compliant, and is qualified according to JEDEC1) for target applications
This document presents the technical data for the Infineon IPW50R250CP CoolMOS power transistor. It includes product summaries, maximum ratings, thermal and electrical characteristics, and typical performance curves.
Key features highlighted are the low on‑state resistance, ultra‑low gate charge, high dv/dt capability, and compliance with RoHS. Detailed tables list continuous and pulsed drain currents, capacitances, avalanche energy, and package dimensions for the PG‑TO247 package.
| Continuous drain current (Id) | 13 A (25 °C) |
|---|---|
| Pulsed drain current (Idp) | 31 A (25 °C) |
| Total gate charge (Qg) | 27 nC |
| Output capacitance (Coss) | 63 pF |
| Package type | PG‑TO247 |
The device can handle a continuous drain current of 13 A at 25 °C.
It is supplied in a PG‑TO247 TO‑247 package.