The SPA11N60CFD CoolMOSTM power transistor features new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating. It is qualified according to JEDEC0) for target applications.
The SPA11N60CFD is a CoolMOS™ power transistor offered by Infineon Technologies. It features a high voltage rating, fast‑recovery body diode, low reverse recovery charge, and an ultra‑low gate charge, packaged in a TO‑220‑3‑31 (FullPAK) case.
The document lists maximum ratings, thermal and electrical characteristics, dynamic behavior, and typical output curves. Key parameters such as drain‑source voltage, continuous and pulsed drain currents, gate threshold, on‑state resistance, and power dissipation are detailed for design and reliability assessment.
| Drain‑source voltage rating | 600 V |
|---|---|
| Continuous drain current (Id) @ 25 °C | 4 A |
| Pulsed drain current (Id,pulse) @ 25 °C | 28 A |
| Gate threshold voltage (Vgs(th)) | 3‑5 V |
| On‑state resistance (Rds(on)) | 0.38‑0.44 Ω |
| Maximum power dissipation (Pd) @ 25 °C | 33 W |
| Operating temperature range | -55 °C to 150 °C |
The transistor is rated for a maximum drain‑source voltage of 600 V.
It can conduct a continuous drain current of 4 A at 25 °C.
The gate threshold voltage is between 3 V and 5 V.