SPP07N65C3, SPI07N65C3 and SPA07N65C3 are high voltage Cool MOS™ power transistors. They feature ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, improved transconductance, and fully isolated package (2500 VAC; 1 minute).
The Infineon SPP07N65C3 is a high‑voltage, low‑gate‑charge power MOSFET designed for demanding applications. It offers a continuous drain current of 7.3 A at 25 °C and a peak pulsed current of 21.9 A, with an avalanche‑rated voltage of 650 V.
The datasheet provides detailed electrical, thermal, and switching characteristics, including on‑resistance, capacitances, gate charge, and safe operating area curves, as well as mechanical dimensions and package information for the PG‑TO220 and TO‑262 variants.