BFP640E/L6327 and E/L7764 are high gain low noise RF transistors, providing outstanding performance for a wide range of wireless applications.
The BFP640 is an NPN Silicon Germanium RF transistor designed for high‑gain, low‑noise wireless applications such as CDMA and WLAN. It features a gold‑metallized package for reliability and operates up to 70 GHz using SiGe technology.
The datasheet lists maximum ratings, thermal resistance, DC and AC electrical characteristics, SPICE model parameters, and performance figures such as noise figure, gain, and third‑order intercept point. It also includes permissible pulse load curves and package equivalent circuit details.
| Collector‑emitter voltage (VCEO) | 4 V |
|---|---|
| Collector current (IC) | 50 mA |
| Base current (IB) | 3 mA |
| Transition frequency (fT) | 70 GHz |
| Noise figure at 1.8 GHz | 0.65 dB |
| Maximum stable gain (Gms) | 24 dB |
| Total power dissipation | 200 mW |
The maximum collector‑emitter voltage is 4 V.
The transition frequency is 70 GHz.
The noise figure is 0.65 dB at 1.8 GHz.