SPA11N60CFD is a new high voltage power transistor with an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating, etc.
The SPA11N60CFD is a CoolMOS power transistor featuring a high‑voltage technology, intrinsic fast‑recovery body diode, ultra‑low gate charge and high dv/dt capability. It is qualified according to JEDEC standards and is offered in a TO‑220‑3‑31 package.
The datasheet lists maximum ratings such as 600 V drain‑source breakdown voltage and 11 A continuous drain current, as well as detailed thermal resistance, on‑state resistance, capacitances, gate‑charge characteristics and reverse‑diode parameters. These data help designers assess suitability for high‑power and high‑speed switching applications.
| On‑state resistance (R_DS(on)) typical at 25 °C | 0.38 Ω |
|---|---|
| Gate charge total (Q_g) | 4.8 nC |
| Thermal resistance, junction‑to‑case (R_thJC) | 3.8 K/W |
Typical on‑state resistance at 25 °C is 0.38 Ω.
It is supplied in a TO‑220‑3‑31 (FullPAK) package.