SPA11N60CFD CoolMOSTM power transistor features extremely low reverse recovery charge and ultra-low gate charge, extreme dv/dt rating and high peak current capability.
The SPA11N60CFD is a CoolMOS™ power transistor from Infineon Technologies, offered in a TO‑220‑3‑31 (FullPAK) package. It features a high voltage rating, low gate charge and fast‑recovery body diode, making it suitable for high‑power applications.
Key specifications include a 600 V drain‑source breakdown voltage, 4 A continuous drain current at 25 °C, 28 A pulsed current, 33 W power dissipation at 25 °C, and a thermal resistance of 3.8 K/W. Detailed capacitance, gate‑charge and reverse‑recovery parameters are also listed for precise design work.
| Drain‑source breakdown voltage (VDS) | 600 V |
|---|---|
| Continuous drain current (ID) at 25 °C | 4 A |
| Pulsed drain current (ID,pulse) at 25 °C | 28 A |
| Power dissipation at 25 °C | 33 W |
| Thermal resistance, junction‑to‑case (RθJC) | 3.8 K/W |
| Input capacitance (Ciss) | 1200 pF |
| Output capacitance (Coss) | 390 pF |
| Reverse recovery time (trr) | 140 ns |
| Total gate charge (Qg) | 48‑64 nC |
| Package type | TO‑220‑3‑31 (FullPAK) |
The continuous drain current is rated at 4 A at 25 °C.
The device has a drain‑source breakdown voltage of 600 V.
It is supplied in a TO‑220‑3‑31 (FullPAK) package.
The total gate charge ranges from 48 nC to 64 nC.