SPI21N10 SPP21N10,SPB21N10 is a N-channel enhancement mode power MOSFET from Dinghao. Its maximum continuous drain current is 21A, maximum drain-source voltage is 100V, and maximum junction temperature is 175°C.
This document provides the preliminary electrical, thermal and dynamic characteristics of the Infineon SPI21N10 N‑channel power MOSFET, together with related devices SPP21N10 and SPB21N10. It includes maximum ratings, typical performance curves, and package information for design engineers.
The data sheet lists continuous and pulsed drain current limits, power dissipation, avalanche energy, gate charge, and thermal resistance values, as well as detailed capacitance and switching parameters. It also contains safety and warranty notices from Infineon Technologies AG.
| Continuous drain current (Id) at 25 °C | 21 A |
|---|---|
| Pulsed drain current (Id) (25 °C) | 84 A |
| Power dissipation (Prot) | 90 W |
| Gate threshold voltage (Vgs(th)) | 2.1 V (typ) |
| Avalanche energy (Eas) per pulse | 130 mJ |
The SPI21N10 can handle a continuous drain current of 21 A at 25 °C.
The device is rated for a power dissipation of up to 90 W.
The avalanche energy is specified as 130 mJ per single pulse.