The document introduces the features of Cool MOS™ power transistors such as SPP21N50C3, SPB21N50C3, SPI21N50C3, and SPA21N50C3. These features include new high-voltage technology, best RDS(on), ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitance, and improved transconductance. The document also provides information on the packages, ordering codes, and maximum ratings of these models.
Infineon’s SPP21N50C3 series comprises high‑voltage, low‑gate‑charge MOSFETs offered in TO‑220, TO‑263 and FullPAK packages. The devices feature a 560 V rating, ultra‑low gate charge and high transconductance, making them suitable for power conversion and switching applications.
The datasheet lists maximum ratings such as 500 V drain‑source breakdown, 26 A continuous drain current at 25 °C, and a power dissipation of 208 W. Thermal characteristics include a junction‑to‑ambient resistance of 62 K/W (lead‑ed) and various transient thermal impedance curves. Detailed electrical parameters, gate‑charge curves, and safe‑operating‑area graphs are also provided.
| Continuous drain current (25 °C) | 26 A |
|---|---|
| Power dissipation at 25 °C | 208 W |
| Package type (example) | TO‑220‑3‑1 |