This document is a product specification manual, which mainly introduces the features and characteristics of the K4S1G0732B product, including the product's organization structure, operating frequency, timing, interface, etc.
The K4S1G0732B is a 1‑Gb stacked B‑die SDRAM organized as 32M × 8 bit × 4 banks. It follows JEDEC 3.3 V standards, supports LVTTL interfaces, and offers programmable burst lengths and CAS latencies. The device is packaged in a 54‑pin TSOP III form factor.
Key electrical parameters include a supply voltage range of 3.0 V – 3.6 V, a maximum operating frequency of 133 MHz, storage temperature from –55 °C to +150 °C, and a power dissipation of up to 2 W. Absolute maximum pin ratings are –1.0 V to 4.6 V. Detailed timing, pin configuration, and command tables are provided for design integration.
| Organization | 32M x 8‑bit x 4 banks |
|---|---|
| Supply Voltage (typical) | 3.3 V |
| Package | 54‑pin TSOP III |
| Storage Temperature | -55 °C to +150 °C |
| Power Dissipation | 2 W |
The recommended supply voltage is 3.0 V minimum, 3.3 V typical, and 3.6 V maximum.
It is supplied in a 54‑pin TSOP III stacked package.
Pins may be exposed to voltages from –1.0 V to 4.6 V relative to Vss.