2SK2640-01MR is a N-channel MOS-FET produced by Dinghao Semiconductor. It has the characteristics of high switching speed, low on-resistance, no secondary breakdown, low driving power, high voltage, etc. It is used in switching regulators, UPS, DC-DC converters and general purpose power amplifiers.
The 2SK2640-01MR is an N‑channel MOSFET from Collmer's FAP‑IIS series, offering high‑speed switching, low on‑resistance, and a high voltage rating. Key features include low driving power, no secondary breakdown, and a guaranteed 30 V drain‑source voltage.
The datasheet lists absolute maximum ratings such as 500 V VDS, 10 A continuous drain current, and 50 W power dissipation, along with detailed electrical and thermal characteristics. Typical output curves, capacitance values, and gate charge data are also provided for design reference.
| Maximum Power Dissipation (PD) | 50 W |
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