The Fuji 2MI50F-050 MOS‑FET module is a N‑channel silicon power MOS‑FET designed for high‑current, high‑voltage applications such as UPS, servo motors, and high‑frequency power supplies. It features low on‑resistance, integrated fast‑recovery diode, and a metal‑base construction for improved thermal performance.
Key electrical ratings include a maximum drain‑source voltage of 500 V, continuous drain current of 50 A, pulsed drain current of 150 A, and a power dissipation capability of 400 W. Thermal characteristics provide a case‑to‑ambient resistance of 0.312 °C/W and an operating temperature range from –40 °C to +125 °C. Detailed transfer, output, turn‑on, turn‑off, and reverse‑recovery characteristics are provided for design reference.