MT28F322D20FH is a 2 MEG x 16 Async/Page/Burst Flash Memory, using low voltage, extended temperature 0.18µm process technology, with flexible dual-bank architecture, supporting zero delay concurrent operation.
The MT28F322D20 and MT28F322D18 are high‑density, non‑volatile flash memory devices featuring a flexible dual‑bank architecture that allows concurrent read and program operations with zero latency. They support asynchronous, page and burst read modes and provide soft block protection and two 64‑bit chip‑protection registers for security.
These devices are offered in a 58‑ball FBGA package (8 × 7 grid) and operate from 1.70 V to 2.25 V depending on the part. They tolerate an extended temperature range of –40 °C to +85 °C, deliver up to 54 MHz clock rates, and are rated for 100 k write/erase cycles per block.
| Memory density | 2 Meg × 16 bits |
|---|---|
| Operating voltage (MT28F322D20) | 1.80 V – 2.20 V (Vcc), 2.25 V – 2.30 V (VccQ) |
| Operating voltage (MT28F322D18) | 1.70 V – 1.90 V |
| Operating temperature range | -40 °C to +85 °C |
| Maximum clock rate (MT28F322D20) | 54 MHz |
| Program/Erase cycle endurance | 100,000 cycles per block |
| Package type | 58‑ball FBGA (8 × 7 grid) |
The MT28F322D20 supports a maximum clock rate of 54 MHz.
Both devices operate from –40 °C up to +85 °C.
The devices are rated for 100,000 write/erase cycles per block.
The flash memory is supplied in a 58‑ball FBGA package with an 8 × 7 ball grid.