MT49H8M32 is a 256Mb memory produced by Micron Technology. It uses RLDRAM storage technology, has a maximum data rate of 600Mb/s/p and works at 2.5V VEXT, 1.8V VDD and 1.8V VDDQ. It supports 144-ball, 11mm x 18.5mm T-FBGA package.
The Micron MT49H8M32 and MT49H16M16 are 256‑Mb Reduced Latency DRAM (RLDRAM) devices available in x16 and x32 configurations. They are optimized for fast random access and high‑speed bandwidth in communication buffers and cache applications.
The document provides power‑up and power‑down procedures, functional block diagrams for both 8‑Meg × 32 and 16‑Meg × 16 configurations, detailed ball‑and‑pin assignments for the 144‑ball T‑FBGA package, timing waveforms, programming tables, and JTAG boundary‑scan information.
| Memory density | 256 Mb (x16, x32) |
|---|---|
| Supply voltages | 2.5 V Vext, 1.8 V Vop, 1.8 V VppQ |
| Target data rate | 600 Mb/s per pin |
| Programmable read latency | RL = 5‑8 cycles |
| Refresh interval | 32 ms at 100 °C |
| Package | 144‑ball T‑FBGA, 11 mm × 18.5 mm |
| Clock cycle timing options | 3.3 ns (300 MHz), 4 ns (250 MHz), 5 ns (200 MHz) |
Apply power, then start the clock; after power‑on wait 200 ps, issue an MRS command for 2 clocks, set the standard mode register for 1 clock, and perform at least eight refresh cycles spaced by 2,048 clocks before normal operation.
The device requires a 2.5 V external supply (Vext), a 1.8 V core supply (Vop), and a 1.8 V VppQ supply.
Both parts are supplied in a 144‑ball thin‑film BGA (T‑FBGA) package measuring 11 mm × 18.5 mm.
Refresh commands must be issued every 32 ms at a junction temperature of 100 °C.