The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. It features enhancement-mode MOSFET transistors, broadband frequency range, low-power control current, and the ability for linear operation.
The RA30H1317M is a 30‑watt RF MOSFET amplifier module designed for 12.5‑V mobile radios operating in the 135‑175 MHz band. It uses enhancement‑mode MOSFET transistors and can be driven directly from a battery, with output power controlled by gate voltage or input power.
The document lists maximum ratings, electrical characteristics, typical performance graphs, mechanical dimensions, and detailed recommendations for mounting, heat‑sink design, ESD protection, and safety. It also includes a block diagram, equivalent circuit, and RoHS compliance information.
| Frequency Range | 135 – 175 MHz |
|---|---|
| Output Power | 30 W (typical) |
| Drain Voltage (Vpp) | 12.5 V |
| Gate Voltage (Vea) | 0 – 5 V |
| Input Power (Pin) | 50 mW (typ) |
| Gate Current (Ieg) | 1 mA (typ) |
| Total Efficiency | 40 % (typ) |
| Package Size | 66 × 21 × 9.88 mm |
M3 screws should be tightened to a torque of 4.0 to 6.0 kgf‑cm.
The module is sensitive to ESD voltages down to 1000 V and requires appropriate precautions.
A thermal resistance of about 0.67 °C/W (case‑to‑air) is recommended.
RoHS compliance is indicated by the letter “G” after the lot marking.