RA13H1317M-101 is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.
The RA13H1317M is a 13‑watt RF MOSFET amplifier module for 12.5‑V mobile radios operating in the 135‑175 MHz band. It uses enhancement‑mode MOSFET transistors and can be driven by gate voltages from 0 V up to 5 V, with typical nominal output power available at 4.5‑5 V.
The module is built on an alumina substrate with a copper flange, protected by a plastic cap. It includes detailed recommendations for mounting, heat‑sink design, ESD protection, and safety precautions for reliable operation in mobile‑radio applications.
| Frequency Range | 135‑175 MHz |
|---|---|
| Output Power (typical) | 13 W |
| Drain Voltage (Vpp) | 12.5 V |
| Gate Voltage (Vaa) range | 0‑5 V |
| Input Power (Pin) | 50 mW |
| Total Efficiency (typical) | 40 % |
| Harmonic (typical) | -25 dBc |
| Gate Current (typical) | 1 mA |
| Module Size | 66 × 21 × 9.88 mm |
The nominal output power becomes available at about 4.5 V (typical) and up to 5 V (maximum).
RoHS compliance is indicated by the letter “G” after the lot marking.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf‑cm.
The module case temperature should be kept below 90 °C for long‑term reliability.