Mitsubishi Electric RA08N1317M RF Power Amplifier Module Datasheet

The RA08N1317M is an 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range.


Mitsubishi Electric RA08N1317M RF Power Amplifier Module Datasheet - cover page
Brand
Mitsubishi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
144 KB
Published
21 March, 2012
Updated
30 September, 2023
MD5 checksum
17E5711299B1A2B9F6E55593185A87F7

About this manual

The RA08N1317M is an 8‑watt RF MOSFET amplifier module designed for 9.6 V portable radios operating between 135 MHz and 175 MHz. It uses enhancement‑mode MOSFET transistors and can be driven by gate voltages from about 2.5 V to 3.5 V to achieve nominal output power.

The module is built on an alumina substrate with a copper flange, protected by a plastic cap. Proper ESD handling, heat‑sink mounting, and soldering procedures are required for reliable operation. RoHS compliance is indicated by a “G” lot marking.

What's inside

  • Description
  • Features
  • Maximum Ratings
  • Electrical Characteristics
  • Typical Performance
  • Package Outline
  • Test Block Diagram
  • Recommendations and Application Information
  • Output Power Control
  • Precautions

Specifications

Frequency Range135‑175 MHz
Input Power (Pin)20 mW
Gate Voltage (typical)3 V – 3.5 V
Package Size30 × 10 × 5.4 mm
Low‑Power Control Current1 mA (typ) at Veg=3.5 V

Frequently asked questions

What torque is recommended for the mounting screws?

M2.6 screws should be tightened to a torque of 1.8 – 3.0 kgf‑cm.

What is the maximum case temperature for reliable operation?

The module case temperature should be kept below 90 °C for long‑term reliability.

How is RoHS compliance indicated on this product?

RoHS compliance is indicated by the letter “G” after the lot marking.

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