The RA08H1317M is an 8-watt RF MOSFET Amplifier Module from RASilicon, for portable radios operating in the 135- to 175-MHz range.
The RA08H1317M is an 8‑watt RF MOSFET amplifier module designed for 12.5‑V portable radios operating in the 135‑175 MHz band. It features enhancement‑mode MOSFET transistors, low‑power gate control (typical 1 mA at 3.5 V) and a compact 30 × 10 × 5.4 mm package.
The datasheet provides maximum ratings, electrical characteristics, typical performance curves, mechanical construction details, mounting recommendations, thermal design guidelines and safety precautions. It also includes RoHS compliance information and ordering data.