The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.
The RA35H1516M is a silicon RF power module designed for mobile radios operating in the 154‑162 MHz band. It delivers up to 40 W of output power from a 12.5 V supply and uses enhancement‑mode MOSFET transistors with low‑power gate control.
The datasheet provides maximum ratings, electrical characteristics, typical performance curves, mechanical dimensions, and recommended mounting, thermal, and ESD precautions to ensure reliable operation in demanding environments.
| Frequency Range | 154 – 162 MHz |
|---|---|
| Output Power | 40 W |
| Drain Voltage (Vpp) | 17 V (typ) |
| Gate Voltage (Vea) | ≤12.5 V |
| Input Power (Pin) | 100 mW |
| Total Efficiency | ≈50 % |
| Package Size | 66 × 21 × 9.88 mm |
| Operating Case Temperature Range | -30 °C to +110 °C |
| Storage Temperature Range | -40 °C to +110 °C |
| ESD Sensitivity | down to 1000 V |
| Mounting Screw Torque | 4.0 – 6.0 kgf·cm |
Nominal output power becomes available at a gate voltage around 4.5 V (typical) to 5 V (maximum).
The module case temperature should be kept below 90 °C for long‑term reliability.
Use M3 screws tightened to 4.0 – 6.0 kgf·cm.
The module is sensitive to ESD voltages down to 1000 V and requires appropriate precautions.