The RA33H1516M1 is a 33-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.
The RA33H1516M1 is a silicon RF power module designed for mobile radios operating in the 154‑162 MHz band. It delivers up to 33 W output power using a two‑stage MOSFET architecture and can be powered directly from a 12.5 V battery.
The datasheet provides maximum ratings, electrical characteristics, typical performance curves, mechanical construction details, recommended mounting procedures, and safety precautions such as ESD sensitivity and thermal design requirements.
| Frequency Range | 154 – 162 MHz |
|---|---|
| Output Power | 33 W |
| Drain Voltage Rating | 17 V |
| Gate Voltage Rating | 6 V |
| Input Power Rating | 20 mW |
| Module Size | 46 × 14.4 × 6.3 mm |
| Package Code | H57 |
| Operating Temperature Range | -25 °C to +100 °C |
| ESD Sensitivity | down to 1000 V |
| Mounting Screw Torque | 4.0 – 6.0 kgf·cm |
| Thermal Resistance (case‑air) | 0.91 °C/W |
M3 screws should be tightened to a torque of 4.0 to 6.0 kgf·cm.
The module is sensitive to electro‑static discharge voltages down to 1000 V.
A thermal resistance of about 0.91 °C/W (case‑air) is recommended.
The letter “G” after the lot marking indicates RoHS compliance.