XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. It has low on state resistance, which enables efficient energy saving. It has a built-in gate protect diode to counter static and is suitable for applications such as notebook PCs, cellular and portable phones, on-board power supplies, and Li-ion battery systems. The product features ultra high-speed switching, low on state resistance, and a small package.
The Torex XP151A13A0MR-G is an N‑channel Power MOSFET featuring low on‑state resistance and ultra‑high‑speed switching. It includes a built‑in gate‑protect diode and complies with EU RoHS and lead‑free standards. The device is supplied in a compact SOT‑23 package suitable for high‑density mounting.
Typical applications include notebook PCs, cellular phones, on‑board power supplies, and Li‑ion battery systems. The datasheet provides detailed electrical, thermal, and dynamic characteristics, as well as absolute maximum ratings and typical performance curves.
| Drain‑Source Voltage (Vdss) | 20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±8 V |
| Continuous Drain Current (Id) | 1 A |
| Pulse Drain Current (Idp) | 4 A |
| Reverse Drain Current (Idr) | 1 A |
| Channel Power Dissipation (Pd) | 0.5 W |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to 150 °C |
| Input Capacitance (Ciss) | 220 pF |
| Output Capacitance (Coss) | 120 pF |
| Turn‑On Delay Time (td(on)) | 10 ns |
| Rise Time (tr) | 15 ns |
| Turn‑Off Delay Time (td(off)) | 75 ns |
The MOSFET is rated for a maximum drain‑source voltage of 20 V.
It is supplied in a SOT‑23 surface‑mount package.
Yes, the MOSFET is EU RoHS compliant and free of halogen and antimony.