The XP152A11E5MR-G is a P-channel Power MOSFET from Fujitsu Microelectronics with low on-state resistance and ultra high-speed switching characteristics. It can achieve high-speed switching, thereby efficiently setting the IC and saving energy. The built-in gate protect diode is used to prevent static interference. The small SOT-23 package makes high density mounting possible.
The XP152A11E5MR-G P‑channel Power MOSFET is designed for high‑density mounting in SOT‑23 packages and offers low on‑state resistance and ultra‑high‑speed switching. It includes a built‑in gate‑protect diode and is fully RoHS compliant, making it suitable for notebook PCs, cellular phones, on‑board power supplies and Li‑ion battery systems. Key electrical characteristics include a drain‑source voltage rating of –30 V, gate‑source voltage of ±20 V, a continuous drain current of –0.7 A, on‑state resistance as low as 0.25 Ω at Vgs = ‑10 V, input capacitance of 160 pF, output capacitance of 120 pF, turn‑on delay of 10 ns and turn‑off delay of 25 ns, and a thermal resistance of 250 °C/W.
| Drain‑Source Voltage (Vdss) | -30 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±20 V |
| Drain Current (DC) Id | -0.7 A |
| On‑State Resistance (Rds(on)) | 0.25 Ω @ Vgs = -10 V |
| Input Capacitance (Ciss) | 160 pF |
| Output Capacitance (Coss) | 120 pF |
| Turn‑On Delay Time (td(on)) | 10 ns |
| Turn‑Off Delay Time (td(off)) | 25 ns |
It is supplied in a SOT‑23 package, with 3,000 units per reel.
It is suitable for notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
Yes, the “‑G” suffix indicates the part is halogen‑ and antimony‑free and fully RoHS compliant.