XP161A11A1PR-G is a N-channel power MOSFET from Infineon with low on-state resistance and ultra high-speed switching characteristics. The device is packaged in a SOT-89 package and has environmental, small size and other advantages, suitable for notebook computers, mobile phones and other applications.
The XP161A11A1PR-G is an N‑channel Power MOSFET featuring low on‑state resistance, ultra‑high‑speed switching, and a built‑in gate‑protect diode. It is supplied in a compact SOT‑89 package suitable for high‑density mounting in notebook PCs, cellular phones, on‑board power supplies, and Li‑ion battery systems.
The document lists absolute maximum ratings, detailed DC and dynamic electrical characteristics, thermal data, and typical performance curves. It also confirms RoHS compliance (halogen‑ and antimony‑free) and provides packaging and ordering information.
| Drain‑Source Voltage (Vdss) | 30 V |
|---|---|
| Gate‑Source Voltage (Vgss) | +20 V |
| Pulse Drain Current (Ido) | 16 A |
| On‑State Resistance @ Vgs=10 V | 0.0652 Ω |
| On‑State Resistance @ Vgs=4.5 V | 0.1052 Ω |
| Input Capacitance (Ciss) | 270 pF |
| Turn‑On Delay Time (td(on)) | 10 ns |
| Thermal Resistance (Rth ch‑a) | 62.5 °C/W |
The device can withstand up to 30 V between drain and source.
The on‑state resistance is 0.0652 Ω when Vgs is 10 V.
Yes, it is EU RoHS compliant and the “‑G” suffix indicates it is halogen‑ and antimony‑free.
It is supplied in a small SOT‑89 surface‑mount package.