XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.
The XP162A11C0PR-G is a P‑channel power MOSFET featuring low on‑state resistance and ultra‑high‑speed switching, packaged in a compact SOT‑89 case for high‑density mounting. It includes a built‑in gate‑protect diode and is fully RoHS compliant (halogen‑ and antimony‑free).
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems. The datasheet provides absolute maximum ratings, electrical characteristics, thermal data, and typical performance curves to aid designers in selecting and using the device.
| Drain‑Source Voltage (Vdss) | -30 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±20 V |
| Drain Current (Id, DC) | -2.5 A |
| On‑State Resistance (Rds(on)) | 0.15 Ω @ Vgs = -10 V |
| Input Capacitance (Ciss) | 280 pF |
| Output Capacitance (Coss) | 200 pF |
| Turn‑On Delay Time (td(on)) | 10 ns |
It is offered in a SOT‑89 package, typically 1,000 units per reel.
Yes, the “-G” suffix indicates the part is halogen‑ and antimony‑free and fully RoHS compliant.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The maximum continuous drain current is –2.5 A, with a pulse rating of –10 A.