XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. This product is equipped with a static protection diode and can be mounted in high density.
The XP152A12C0MR-G is a P‑channel power MOSFET offering low on‑state resistance (Rds(on) as low as 0.30 Ω) and ultra‑high‑speed switching. It includes a built‑in gate protect diode and is supplied in a compact SOT‑23 package, making high‑density mounting possible. The device is RoHS compliant, with the “-G” suffix indicating halogen‑ and antimony‑free construction.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems. Electrical specifications cover a drain‑source voltage of –20 V, gate‑source voltage of ±12 V, and a maximum drain current of –0.7 A (DC) with pulse capability up to –2.8 A. Thermal and switching characteristics are provided for design reference.
| Drain‑Source Voltage (Vdss) | -20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±12 V |
| Drain Current (DC) Id | -0.7 A |
| On‑State Resistance Rds(on) (typical) | 0.30 Ω @ Vgs = -4.5 V |
| Input Capacitance Ciss | 180 pF |
| Turn‑On Delay Time td(on) | 5 ns |
Notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
Yes, it has a built‑in gate protect diode.