The XP161A1265PR-G is an N-channel power MOSFET from Infineon Technologies, with low on-state resistance and ultra high-speed switching characteristics. The product has low on-state resistance, ultra high-speed switching, built-in static protection diode, and small SOT-89 package for high density mounting.
The XP161A1265PR-G is an N‑channel Power MOSFET featuring low on‑state resistance and ultra‑high‑speed switching. Its small SOT‑89 package enables high‑density mounting and it includes a built‑in gate‑protect diode for static protection. The device is RoHS compliant and suitable for notebook PCs, cellular phones, on‑board power supplies, and Li‑ion battery systems.
Key specifications include a 20 V drain‑source rating, ±12 V gate‑source rating, 4 A continuous drain current, and a typical on‑resistance of 0.055 Ω at Vgs = 4.5 V. Thermal resistance is 62.5 °C/W, and switching times are in the nanosecond range, making it ideal for high‑efficiency power management applications. This manual is written in Chinese.
| Drain-Source Voltage (Vdss) | 20 V |
|---|---|
| Gate-Source Voltage (Vgss) | ±12 V |
| Continuous Drain Current (Id) | 4 A |
| Pulse Drain Current (Idp) | 16 A |
| On‑State Resistance (Rds(on)) | 0.055 Ω @ Vgs=4.5V |
| Input Capacitance (Ciss) | 320 pF |
| Turn‑On Delay Time (td(on)) | 10 ns |
It uses a small SOT‑89 package, which allows high‑density mounting.
Yes, the device is EU RoHS compliant and halogen/antimony free.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The MOSFET can handle up to 4 A continuous drain current and 16 A pulsed current.