The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.
The XP161A1355PR-G is an N‑channel power MOSFET offered by Torex in a compact SOT‑89 package. It features low on‑state resistance, ultra‑high‑speed switching, and a built‑in gate‑protect diode, making it suitable for high‑density mounting in notebook PCs, cellular phones, on‑board power supplies, and Li‑ion battery systems.
The datasheet lists absolute maximum ratings, electrical and thermal characteristics, and typical performance curves. It also notes that the “‑G” suffix indicates halogen‑ and antimony‑free construction and full RoHS compliance.
| Drain‑Source Voltage (Vdss) | 20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±8 V |
| Drain Current (DC) Id | 4 A |
| Drain Current (Pulse) Idp | 16 A |
| On‑State Resistance Rds(on) @ Vgs=4.5 V | 0.05 Ω |
| Input Capacitance Ciss | 390 pF |
| Output Capacitance Coss | 210 pF |
It is supplied in a SOT‑89 surface‑mount package.
Yes, the “‑G” suffix indicates the device is halogen‑ and antimony‑free and fully RoHS compliant.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The device is rated for a maximum drain‑source voltage of 20 V.