XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
The XP151A12A2MR-G is an N‑channel power MOSFET designed for low on‑state resistance and ultra‑high‑speed switching. It features a built‑in gate‑protect diode and is supplied in a compact SOT‑23 package for high‑density mounting.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems. Key specifications are a 20 V drain‑source rating, ±12 V gate‑source rating, 1 A continuous drain current, and RoHS‑compliant (halogen‑ and antimony‑free) construction.
| Drain‑Source Voltage (Vdss) | 20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±12 V |
| Continuous Drain Current (Id) | 1 A |
| Pulse Drain Current (Idp) | 4 A |
| On‑State Resistance (Rds(on)) @ Vgs=4.5 V | 0.1 Ω |
| On‑State Resistance (Rds(on)) @ Vgs=2.5 V | 0.16 Ω |
| Input Capacitance (Ciss) | 180 pF |
| Output Capacitance (Coss) | 120 pF |
| Turn‑On Delay (td(on)) | 10 ns |
| Rise Time (tr) | 15 ns |
| Turn‑Off Delay (td(off)) | 50 ns |
It is supplied in a SOT‑23 package, allowing high‑density mounting.
Yes, the “-G” suffix indicates the part is halogen‑ and antimony‑free and fully RoHS compliant.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The device is rated for a maximum drain‑source voltage of 20 V.