XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
The XP151A11B0MR-G is an N‑channel power MOSFET designed for low on‑state resistance and ultra‑high‑speed switching. It includes a built‑in gate protect diode and meets EU RoHS requirements, making it suitable for high‑density mounting in SOT‑23 packages.
Typical applications include notebook PCs, cellular phones, on‑board power supplies, and Li‑ion battery systems. Key electrical ratings are a 30 V drain‑source voltage, ±20 V gate‑source voltage, 1 A continuous drain current, and a typical Rds(on) of 0.12 Ω at Vgs = 10 V. This manual is written in Chinese.
| Drain‑Source Voltage (Vdss) | 30 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±20 V |
| Continuous Drain Current (Id) | 1 A |
| Pulse Drain Current (Idp) | 4 A |
| On‑State Resistance (Rds(on)) | 0.12 Ω @ Vgs=10 V |
| Input Capacitance (Ciss) | 150 pF |
| Output Capacitance (Coss) | 90 pF |
| Turn‑On Delay Time (td(on)) | 10 ns |
| Turn‑Off Delay Time (td(off)) | 25 ns |
It is supplied in a small SOT‑23 package.
Yes, it is EU RoHS compliant and lead‑free.