The CGH35015 is a high-performance GaN HEMT from Cree that is designed for 3.3-3.9GHz WiMAX and BWA amplifier applications. The device features 3.3-3.9GHz operation, 15W peak power, 12dB small signal gain, 2.0W PAVE and 26% efficiency.
The CGH35015 is a gallium‑nitride high‑electron‑mobility transistor (HEMT) designed for 802.16‑2004 WiMAX Fixed Access applications. It operates in the 3.3‑3.9 GHz band and is offered in screw‑down, flange, solder‑down and pill packages (440166 and 440196).\n\nKey performance figures include a 15 W peak power capability, 12 dB small‑signal gain, 2 W PAVE with less than 2 % EVM, and 26 % drain efficiency at 2 W average power. The datasheet provides absolute maximum ratings, DC and RF characteristics, typical WiMAX performance graphs, S‑parameter data, and a bill of materials for the demonstration amplifier circuit.
| Operating Frequency | 3.3 – 3.9 GHz |
|---|---|
| Peak Power Capability | 15 W |
| Small‑Signal Gain | 12 dB |
| Drain Efficiency (2 W avg.) | 26 % |
| PAVE (Power Added Efficiency) | 2.0 W at < 2.0 % EVM |
| Package Types | 440166 (screw‑down) and 440196 (pill) |
It operates from 3.3 GHz to 3.9 GHz.
The device can deliver up to 15 W of peak power.
It is offered in screw‑down, flange, solder‑down and pill packages, identified as 440166 and 440196.
The small‑signal gain is typically 12 dB.