Industrial

The AT27BV800 is a high performance low-power, low-voltage 8,388,608-bit one time programmable read only memory (OTP EPROM), organized as either 512K by 16 or 1024K by 8 bits. It requires only one supply in the range of 2.7 to 3.6V in normal read mode.

The TT8J11 is a 1.5V drive Pch + Pch MOSFET produced by ROHM. It has the characteristics of low voltage drive, low on-resistance, and small packaging.

The AT27BV4096 is a high performance, low power, low voltage 4,194,304 bit one-time programmable read only memory (OTP EPROM) organized as 256K by 16 bits. It requires only one supply in the range of 2.7V to 3.6V in normal read mode operation. The by-16 organization makes this part ideal for portable and handheld 16 and 32 bit microprocessor based systems using either regulated or unregulated battery power.

AT24C128/256 provides 131,072/262,144 bits of serial electrically erasable and programmable read only memory (EEPROM)

EN29F002A / EN29F002AN is a 5.0V ± 10% fast flash memory produced by Eon Silicon Solution, with read access time of 45ns, 55ns, 70ns and 90ns, and supports single sector and chip erase.

EN29F002 / EN29F002N is a 2-Megabit flash memory product with features including 5.0V voltage supply, multiple read access time options, sector architecture, high performance programming/erasing speed, and low power consumption.

This document describes the features of IDT7132SA/LA and IDT7142SA/LA high-speed 2K x 8 dual-port static RAM. The product features high-speed access, low-power operation, expandable data bus width, port arbitration logic, BUSY output flag, battery backup operation, TTL compatibility, etc.

This document describes the structure, dimensions, features, and applications of the 1.2V Drive Pch MOSFET EM6J1 produced by ROHM Co., Ltd.

This document describes the features and characteristics of the 1.5V Drive Pch+SBD MOSFET ES6U1 product from ROHM Co., Ltd.

ES6U2 1.5V Drive Nch+SBD MOSFET is a device that integrates Nch MOSFET and Schottky diode. It has the characteristics of high switching speed, low on-resistance, low driving voltage, etc., and is suitable for internal circuit switching applications.

The ES6U3 is a 4V drive Nch+SBD MOSFET from ROHM, which features high switching speed, low on-resistance, and a built-in low VF Schottky barrier diode. It can be used in internal circuit switching applications.

ES6U41 is ROHM's 2.5V Drive Nch+SBD MOSFET, with high switching speed, low on-resistance, low drive voltage characteristics

EM6M2 is a low voltage drive Nch+Pch MOSFET produced by ROHM. It has the characteristics of high switching speed, low driving voltage, and built-in G-S protection diode. It can be applied to switching circuits.

EM6K31 is a Nch+Nch MOSFET from ROHM with high switching speed, small package and low drive voltage, suitable for switching applications.