Industrial

BCX 51 . BCX 53 is a PNP silicon AF transistor manufactured by Texas Instruments, with characteristics of high collector current and low collector-emitter saturation voltage. The complementary type is BCX 54 - BCX 56 (NPN) with a SOT-89 package and a pin configuration of 1 2 3 B C E.

BCR5AM-12 is a thyristor switch element produced by Powerex, with an rated voltage of 400-600V and a rated current of 5A. It is suitable for AC switch, heating, motor control and lighting applications.

This datasheet provides detailed information on the features and characteristics of the CY7C4255/65 8K/16Kx18 deep synchronous FIFOs

IRL1104S/L HEXFET® Power MOSFET is a high performance MOSFET device that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This device offers the designer an extremely efficient and reliable device for use in a wide variety of applications.

FR801-FR806 series is a 8A 200V fast recovery rectifier with low forward voltage drop, high current capability, high reliability and high surge current capability.

The document describes the features and characteristics of the FR601 to FR607 series 6A fast recovery rectifiers, including low cost, low leakage, low forward voltage drop, high current capability, and fast switching speed.

IRG4CC40UB is a 600V IGBT with a 6-inch wafer package and a rated power of 10A.

SGR20N40L / SGU20N40L is an insulated gate bipolar transistor (IGBT) from Fairchild Semiconductor Corporation with superior conduction and switching performance. It is widely used in strobe applications.

The S-Type Voltage Controlled Crystal Oscillator (VCXO) is a quartz stabilized square wave generator with a CMOS output from Vectron International. It is tested at CMOS (3.3 and 5V operation) and TTL (5 V operation) logic levels. Devices are tested for absolute pull range (APR) and start-up over the operating temperature range which insures the performance and reliability.

This document describes a silicon PIN diode (BAR14-1, BAR15-1, BAR16-1, BAR61) that can be used as an RF switch and RF attenuator for frequencies above 10 MHz. The diode has a low distortion factor and long-term stability of electrical characteristics.