The AT27BV800 is a high performance low-power, low-voltage 8,388,608-bit one time programmable read only memory (OTP EPROM), organized as either 512K by 16 or 1024K by 8 bits. It requires only one supply in the range of 2.7 to 3.6V in normal read mode.
The AT27BV800 is an 8‑Megabit one‑time programmable EPROM offered in PLCC, SOIC and TSOP packages. It supports dual voltage operation (2.7 V–3.6 V or standard 5 V ±10 %) and provides fast read access of 120 ns.
The device features low standby current (<1 mA at 3 V), rapid programming (≈50 µs/word), high ESD protection (2000 V) and latch‑up immunity (200 mA). Detailed electrical characteristics, timing diagrams, and ordering information are provided for designers.
| Read Access Time | 120 ns |
|---|---|
| Supply Voltage Range | 2.7 V to 3.6 V (or 5 V ±10 %) |
| Standby Current | <1 mA at 3 V |
| Active Current | 10 mA at 5 MHz, 3.6 V |
| Capacity | 8 Megabit (512K × 16 or 1024K × 8) |
| ESD Protection | 2000 V |
| Latchup Immunity | 200 mA |
| Programming Speed | ≈50 µs/word (typical) |
| Package Types | 44‑Lead PLCC, 44‑Lead SOIC (SOP), 48‑Lead TSOP |
It operates from 2.7 V to 3.6 V, and also from 5 V ±10 % for standard applications.
The standby current is typically less than 1 mA at a 3 V supply.
The device is offered in 44‑Lead PLCC, 44‑Lead SOIC (SOP) and 48‑Lead TSOP packages.
Programming typically takes about 50 µs per word using the Rapid™ Programming Algorithm.