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TT8U2 is a Pch +SBD MOSFET produced by Rohm. It has the characteristics of high switching speed and low on-resistance. The working voltage is 1.5V. It has a built-in low IR Schottky diode.
TT8U1 is a low voltage drive Pch+SBD MOSFET produced by ROHM. The product has the characteristics of low voltage drive, high power package and low switching loss. It is mainly used in switching power supply circuits.
TT8M2 is a 2.5V driven Nch MOSFET and 1.5V driven Pch MOSFET from ROHM. This product has the advantages of low on-state resistance, low drive voltage and high power package, which is suitable for internal circuit switching and other applications.
TT8M11 is a low voltage drive Nch+Pch MOSFET with low on-resistance, low voltage drive and small package, suitable for switch power supply applications
2.5V Drive Nch MOSFET TT8K2 is a low voltage driven MOSFET with low on-state resistance and fast switching. It is suitable for internal circuit switching.
ER1A THRU ER1M 1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts, This product has the following features: extremely low thermal resistance, easy pick and place, high temperature soldering: 250°C 10 seconds terminals, superfast recovery times, high efficiency.
The document describes the features and characteristics of ROHM's 1.5V Drive Nch MOSFET TT8K1, including low on-resistance, high power package, and 1.5V drive. The product is suitable for switching applications.
This document describes the features and characteristics of the 1.5V Drive Pch+Pch MOSFET TT8J21 produced by ROHM, including low on-resistance, high power package, and low voltage drive. The product is suitable for switching applications.
This document introduces the structure, features, applications, and packaging specifications of ROHM's 1.5V Drive Pch + Pch MOSFET TT8J13. It is a silicon P-channel MOSFET with low on-resistance, small high power package, and low voltage drive capabilities.