EN29F002A / EN29F002AN is a 5.0V ± 10% fast flash memory produced by Eon Silicon Solution, with read access time of 45ns, 55ns, 70ns and 90ns, and supports single sector and chip erase.
The EN29F002A and EN29F002AN are 2‑Megabit electrically erasable, read/write non‑volatile flash memories organized into 256 K words of 8 bits each. They provide separate Chip Enable, Output Enable, and Write Enable pins, and support both single‑sector and full‑chip erase operations with sector‑level protection.
Key features include 5.0 V (+10%) read/write voltage, fast access times as low as 45 ns, low standby currents (1 µA CMOS, 1 mA TTL), 30 mA active read/program current, 100 K program/erase endurance, and multiple package options (32‑pin PDIP, PLCC, TSOP).
| Memory size | 2 Megabit (256K × 8‑bit) |
|---|---|
| Byte program time | 10 µs typical |
| Sector erase time | 500 ms typical |
| Chip erase time | 3.5 s typical |
| CMOS standby current | 1 µA typical |
| TTL standby current | 1 mA |
| Active read current | 30 mA |
| Program/erase current | 30 mA |
| Endurance | 100 K cycles per sector |
| Package options | 32‑pin PDIP, PLCC, TSOP (Type 1) |
| Temperature range | Commercial and Industrial |
The CMOS standby current is typically 1 µA, while the TTL standby current is about 1 mA.
A typical sector erase takes 500 ms.
Each sector can endure at least 100 K program/erase cycles.