EN29F002 / EN29F002N is a 2-Megabit flash memory product with features including 5.0V voltage supply, multiple read access time options, sector architecture, high performance programming/erasing speed, and low power consumption.
The EN29F002 and EN29F002N are 2‑Megabit (256K × 8‑bit) electrically erasable flash memories organized into seven sectors, including a 16 KB boot sector, two 8 KB parameter sectors, one 32 KB sector and three 64 KB main sectors. They operate at 5.0 V ± 10 % for both read and write operations and feature fast access times as low as 45 ns.
Key features include a typical byte‑program time of 10 µs, sector erase time of 500 ms, chip erase time of 3.5 s, 100 k endurance cycles, low standby currents (<1 µA CMOS, <1 mA TTL), and active read current of 30 mA. The device is offered in 32‑pin PDIP, PLCC and TSOP (Type 1) packages and supports commercial (0 °C to +70 °C) and industrial (‑40 °C to +85 °C) temperature ranges.
| Memory capacity | 2 Megabit (256K × 8‑bit) |
|---|---|
| Read access time | 45 ns, 55 ns, 70 ns, 90 ns |
| Operating voltage | 5.0 V ± 10 % |
| Byte program time | 10 µs typical |
| Sector erase time | 500 ms typical |
| Chip erase time | 3.5 s typical |
| Endurance | 100 k program/erase cycles |
| Package options | 32‑pin PDIP, PLCC, TSOP (Type 1) |
| Temperature range | Commercial 0 °C to +70 °C, Industrial ‑40 °C to +85 °C |
It operates at 5.0 V with a ±10 % tolerance for both read and write operations.
The boot sector is 16 KB in size.
A byte can be programmed in about 10 µs typical.
It is offered in 32‑pin PDIP, PLCC, and TSOP (Type 1) packages.