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This document is the specification of BZV49 series voltage regulator diodes, which introduces the characteristics of this series of voltage regulator diodes, including voltage range, maximum forward current, power dissipation, operating and storage temperature range
2SK1083-MR is a N-channel MOS-FET with high current, low on-resistance, no secondary breakdown, low drive power, and high forward transconductance. It is suitable for motor control, general purpose power amplifier, DC-DC converters and other applications.
The MAX6315 is a low-power CMOS microprocessor (µP) supervisory circuit designed specifically for monitoring power supplies in µPs and digital systems. It provides excellent circuit reliability and low cost by eliminating external components and adjustments.
The 1N4565 series is a 6.4V zero temperature drift reference diode with temperature coefficients as low as 0.0005%/oC, and four operating currents available - 0.5mA, 1.0mA, 2.00mA and 4.00mA.
The H11AAX-M series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
