SGR20N40L / SGU20N40L is an insulated gate bipolar transistor (IGBT) from Fairchild Semiconductor Corporation with superior conduction and switching performance. It is widely used in strobe applications.
The SGR20N40L (surface‑mount) and SGU20N40L (straight‑lead) are insulated‑gate bipolar transistors with a trench gate structure. They provide superior conduction, high input impedance, and wide noise immunity, making them well‑suited for strobe flash applications.
Key specifications include a 400 V collector‑emitter rating, ±6 V gate‑emitter rating, 150 A pulsed collector current, and a maximum power dissipation of 45 W at 25 °C. Thermal resistance values are 3.0 °C/W (junction‑to‑case) and 50 °C/W (junction‑to‑ambient for D‑PAK). The devices operate from –40 °C to +150 °C and are not authorized for use in life‑support equipment.
| Collector‑Emitter Voltage (VCES) | 400 V |
|---|---|
| Gate‑Emitter Voltage (VGES) | ± 6 V |
| Pulsed Collector Current (ICM) | 150 A |
| Maximum Power Dissipation (TC=25 °C) | 45 W |
| Operating Junction Temperature | -40 to +150 °C |
| Storage Temperature Range | -40 to +150 °C |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 3.0 °C/W |
| Output Capacitance (Coes) | 50 pF |
| Reverse Transfer Capacitance (Cres) | 35 pF |
| Rise Time (tr) | 1.7 µs |
The devices are rated for a maximum collector‑emitter voltage of 400 V.
They can handle a pulsed collector current of up to 150 A.
No, Fairchild does not authorize these components for critical life‑support devices.