BCX 51 . BCX 53 is a PNP silicon AF transistor manufactured by Texas Instruments, with characteristics of high collector current and low collector-emitter saturation voltage. The complementary type is BCX 54 - BCX 56 (NPN) with a SOT-89 package and a pin configuration of 1 2 3 B C E.
The BCX51‑BCX53 series are PNP silicon AF transistors designed for driver and output stages. They offer high collector current capability, low collector‑emitter saturation voltage, and are available in complementary NPN types (BCX54‑BCX56). The series is offered in SOT‑89 packages and tape‑and‑reel form factors.
The datasheet lists maximum ratings such as collector‑emitter voltage up to 80 V, collector current of 1 A, and a total power dissipation of 1 W. Electrical characteristics include typical transition frequency of 125 MHz, thermal resistance values, and storage temperature range from –65 °C to +150 °C.
| Collector‑emitter voltage (Vceo) | 45 V (BCX51), 60 V (BCX52), 80 V (BCX53) |
|---|---|
| Collector current (Ic) | 1 A |
| Peak collector current (Tom) | 1.5 A |
| Base current (Is) | 100 mA |
| Peak base current (Ie) | 200 mA |
| Junction temperature (Ti) | 150 °C |
| Storage temperature range | -65 °C to +150 °C |
The BCX53 transistor can handle up to 80 V collector‑emitter voltage.
The series is rated for a continuous collector current of 1 A.
They can be stored from –65 °C up to +150 °C.