This document describes a silicon PIN diode (BAR14-1, BAR15-1, BAR16-1, BAR61) that can be used as an RF switch and RF attenuator for frequencies above 10 MHz. The diode has a low distortion factor and long-term stability of electrical characteristics.
The BAR14-1, BAR15-1, BAR16-1 and BAR61 are silicon PIN diodes designed for RF switching and attenuation above 10 MHz. They are offered in SOT‑23 packages with low distortion and long‑term stability.
The document lists maximum ratings, DC and AC characteristics, thermal resistance, and an example attenuation network using the BAR61 diode. Key parameters such as reverse voltage, forward current, power dissipation and temperature ranges are provided for design reference.
| Reverse voltage (V_R) | 100 V |
|---|---|
| Forward current (I_F) | 140 mA |
| Power dissipation (P_D) | 250 mW |
| Junction temperature (T_J) | 150 °C |
| Operating temperature range | -55 °C to 125 °C |
| Thermal resistance (R_θJA) | < 340 K/W |
| Forward voltage (V_F) typical | 1.05 V |
The diodes are rated for a reverse voltage of 100 V.
It can conduct up to 140 mA forward current.
They operate from –55 °C up to 125 °C.
Typical forward voltage is about 1.05 V.