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The M54/74HC690/691/692/693 are high-speed CMOS counters/registers fabricated in silicon gate C2MOS technology. They offer the high-speed performance of LSTTL combined with the low power consumption of CMOS. The internal circuit consists of three stages, including a buffer output, which provides high noise immunity and stable output. These devices integrate a synchronous counter, a four-bit D-type register, and quadruple two-line to one-line multiplexers with three-state outputs in a single 20-pin package. The counter can be programmed using the data inputs and features enable P and enable T inputs for easy expansion. The device can function as either a counter or a parallel register output.

This manual introduces Motorola's most comprehensive single-chip controller series, including industry-standard 8-bit controllers, the state-of-the-art 16-bit and 32-bit modular controllers. In each series of price and performance categories, there are a variety of on-chip capabilities to meet specific applications. Motorola's device families are structured so that upward migration does not require complete code development. The M68HC11 series is upward code compatible with M6800 and M6801 software, while the M68HC16 series is source-code compatible with the M68HC11 series. Motorola's newest 8-bit MCU product line M68HC08 series is fully interoperable.

This document describes the features and characteristics of the M61515FP sound processor IC, including the built-in QSurround sound technology, electronic volume control, 2-band tone control, 5 input selector, and recommended operating conditions.

The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

This is a document about MITSUBISHI LSIs 262144-BIT CMOS STATIC RAM. The RAM has 262,144 bits, organized as 32,768 words by 8 bits, and is fabricated using high-performance 3 polysilicon CMOS technology. It features a single +5V power supply, no clocks, no refresh, directly TTL compatible inputs and outputs, three-state outputs, and more. Additionally, it has battery backup capability and low standby current.

M5M5256DFP,VP,RV is a 262,144-bit CMOS static RAM produced by Mitsubishi Electric. It is fabricated using high-performance 3 polysilicon CMOS technology and has a high density and low power consumption. It is ideal for memory systems that require simple interface.

M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory has a wide x16 data bus for high bandwidth. It features supply voltage of VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations; VDDQ = 1.8V to VDD for I/O Buffers. It supports synchronous/asynchronous read, namely synchronous burst read, asynchronous random read, asynchronous address latch controlled read and page read. Access time is synchronous burst read up to 56MHz; asynchronous page mode read 90/25ns and 110/25ns; random read 90ns, 110ns. It features 16 word write buffer and 18µs word effective programming time. It features 64 uniform 32 KWord memory blocks, block protection/unprotection, program and erase suspend, 128 bit protection register, common flash interface and 100,000 program/erase cycles/block. Electronic signature is manufacturer code: 0020h - Device code M58LW032A: 8816h. It has two packages, TSOP56 (N) 14 x 20 mm TBGA64 (ZA) 10 x 13 mm TBGA.

M52743SP/M52744SP is a 3-channel video preamplifier that can be controlled by the I2C bus for main/sub contrast and OSD adjustment functions.

The M440T1MV 3.3V, 32 Mbit (1024 Kbit x 32) TIMEKEEPER® SRAM is an ultra-low power SRAM that integrates a real-time clock, power-fail control circuit, battery, and crystal. It also features precision power monitoring and power switching circuitry, and automatic write-protection when VCC is out-of-tolerance.

The document provides specifications and features of DDR SDRAM 256MB, 512MB, and 1GB Registered DIMM. These modules are based on 256Mb E-die (x4, x8) technology and feature 72-bit ECC and 1,700 / 1,200mil height. The ordering information includes part numbers and specifications of modules with different capacities and organizations.

The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. It has a synchronous design that allows precise cycle control. It can be used for a variety of high bandwidth, high performance memory system applications.

The M30201 group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core. M30201 group is packaged in a 52-pin plastic molded SDIP, or 56-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions featuring a high level of instruction efficiency. With 1M bytes of address space, they are capable of execut- ing instructions at high speed. The M30201 group includes a wide range of products with different internal memory types and sizes and various package types.

M29F400BT, M29F400BB are 4Mbit (512Kb x 8 or 256Kb x 16, Boot Block) single supply flash memory, support 5V±10% voltage, reading, programming, erasing time are 45ns, 8µs, 20 years data retention time, product features include 11 storage blocks, embedded byte/word programming algorithm, embedded multi-block/chip erase algorithm, status register polling and toggle bit, ready/busy output pin, erase suspend and resume mode, unlock bypass programming command, temporary block unprotected mode, low power consumption

M29DW324DT M29DW324DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory is the detailed information manual of M29DW324DB product