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2SJ217 is a P-channel MOSFET with low on-resistance, high switching speed, low drive current, etc. It is suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.
2SJ218 is a high-performance power switching device with low on-resistance, high switching speed, 4V gate drive device, can be driven by 5V source, suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.
2SJ221 is a silicon P-Channel MOSFET designed for high-speed power switching applications. It features low on-resistance, high speed switching, low drive current, and can be driven from a 5V source. It is suitable for motor drive, DC-DC converter, power switch, and solenoid drive applications.
The 2SJ222 is a P-channel MOSFET from NXP that is suitable for motor drives, DC-DC converters, power switches and solenoid drives. The device features low on-resistance, high switching speed, low drive current and 4 V gate drive capability, which can be driven from a 5 V source.
