FDS3601 is a 1.3A, 100V N-Channel MOSFET from Fairchild Semiconductor Corporation. It features fast switching speed, low gate charge and high performance trench technology, making it ideal for use in DC/DC converters.
The FDS3601 is a 100V dual N-channel MOSFET featuring PowerTrench technology for low on-resistance and fast switching speeds. It is specifically designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers.
Key features include a low gate charge of 3.7nC typical, high power and current handling capability, and a drain-source breakdown voltage of 100V. The device operates within a junction temperature range of -55 to +175 °C.
| Drain-Source Voltage | 100 V |
|---|---|
| Gate-Source Voltage | +20 v |
| Continuous Drain Current | 1.3 A |
| Pulsed Drain Current | 6 A |
| Power Dissipation (Dual) | 2 W |
| Operating Temperature Range | -55 to +175 °C |
| Gate Charge | 3.7nC typical |
The typical gate charge is 3.7nC.
The maximum drain-source voltage is 100V.
The continuous drain current is 1.3A.