Industrial

This document describes a low barrier diode for detectors up to GHz frequencies. The product has a reverse voltage of 40V and a forward current of 2mA. Additionally, the document provides information on the pin configuration and package of the device.

This document describes the features and characteristics of the BAT 62-07W silicon Schottky diode, including its low barrier diode for detectors up to GHz frequencies, maximum ratings such as reverse voltage and junction temperature, and electrical characteristics such as reverse current and forward voltage.

BAT 62-03W is a low power Schottky diode with a working voltage of up to 40V and a maximum current of 40mA. The package type is SOD-323.

BAT 62-02W is a low power diode for detectors up to GHz frequencies.

BAT 62 is a low barrier diode for detectors up to GHz frequencies.

The BAT 60A is a silicon Schottky diode with an extremely low VF drop. It is suitable for power supplies, low voltage applications for clamping and protection, as well as detection and step-up conversion.

BAT 49 is a Schottky diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges.

BAT 47 and BAT 48 are general purpose metal-silicon diodes with very low turn-on voltage and fast switching characteristics. These devices have integrated protection against excessive voltages such as electrostatic discharges.

BAT 42 BAT 43 are small signal Schottky diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges.

BAT 41 is a small signal Schottky diode in the BAT series. It features a very low turn-on voltage and fast switching. This device has integrated protection against excessive voltages such as electrostatic discharges.

BAT 18 is a low-loss VHF / UHF switch that can be used above 10 MHz. It is a PIN diode with low forward resistance.

This document describes the applications and characteristics of the BAT 17W silicon Schottky diodes. It is suitable for mixer applications in the VHF / UHF range and high-speed switching applications.

This datasheet is for BAT 17-07, which is a silicon Schottky diode from BAT company for mixer applications in the VHF / UHF range and high-speed switching applications. The maximum reverse voltage of this diode is 4 V, the maximum forward current is 130 mA, the maximum power dissipation is 150 mW, and the operating temperature range is -55 to 150 °C.

This document describes the features and characteristics of BAT 17 series silicon Schottky diodes, which are suitable for mixer applications in the VHF/UHF range and high-speed switching applications.

BAT 165 is a silicon Schottky diode produced by BAT company, with a rated reverse voltage of 40 V and a rated forward current of 750 mA.