Industrial

This document is the product datasheet for the BAT140 series Schottky barrier diodes. It introduces the features and characteristics of this series of products, including low switching losses, the ability to absorb very high surge current, fast recovery time, and plastic SMD packaging. Suitable for low power switched-mode power supplies, rectification, polarity protection and other applications.

BAT14-03W is a low noise and low barrier type silicon Schottky diode for DBS mixer application, with a maximum reverse voltage of 4V and a maximum operating temperature of 150°C.

BAT120 series Schottky barrier double diodes feature low switching losses, the capability of absorbing very high surge current, fast recovery time, guard ring protected, plastic SMD package. They are widely used in low power switched-mode power supplies, rectification, polarity protection etc.

The BAT 114-099R is a silicon Schottky diode produced by the semiconductor company. Its maximum rating is IF = 90 mA, the operating temperature range is -55 to +150 °C, the storage temperature range is -55 to +150 °C, and the power dissipation is 100 mW. This diode has a high blocking voltage and is suitable for use in double balanced mixers, phase detectors and modulators.

This document introduces a semiconductor device - Silicon Dual Schottky Diode BAT 114-099. The device features a high barrier diode, suitable for applications such as balanced mixers, phase detectors, and modulators.

BAT1000 is a 1A surface mount Schottky barrier rectifier with features of very low forward voltage drop and high conductance, suitable for use in DC-DC converter, PCMCIA and mobile telecommunications applications.

The document describes the features and characteristics of BAT 68W silicon Schottky diodes, which are mainly used for mixer applications in the VHF / UHF range and high-speed switching applications.

BAT 68-08S is a silicon Schottky diode array designed for mixer applications in the VHF / UHF range and high-speed switching applications. It has a breakdown voltage of 8V, a maximum forward current of 130mA, a maximum junction temperature of 150℃, and a forward resistance of 10Ω.

This document describes the features and characteristics of the BAT 68 series silicon Schottky diodes, which are mainly used for mixer applications in the VHF / UHF range and high-speed switching applications.

BAT 66-05 is a Schottky diode from BAT company. Its maximum reverse voltage is 40 V, maximum forward current is 2 A, and maximum power dissipation is 1.2 W. BAT 66-05 is packaged in SOT-223 and can be used for low-loss, fast-recovery rectification, meter protection, bias isolation, and clamping.

BAT 64-07 is a Schottky diode from BAT company. It has the characteristics of low loss, fast recovery, meter protection, bias isolation and clamping applications. Its reverse voltage is 40V, the average forward current is 120mA, the surge forward current is 800mA, the total power dissipation is 250mW, the junction temperature is 150°C, and the storage temperature is -55~150°C.

The BAT 64 series are a range of silicon Schottky diodes for low-loss, fast-recovery, meter protection, bias isolation and clamping applications. These diodes feature integrated diffused guard rings and low forward voltages.

BAT 63-07W is a silicon Schottky diode with a maximum reverse voltage of 3 V and a maximum forward current of 100 mA. This diode is suitable for high-frequency detection applications and high-speed switching applications.