Industrial

2N6520 is a high voltage PNP type transistor from Fairchild Semiconductor, with a collector-emitter breakdown voltage of -350V and a maximum collector power dissipation of 0.625W.

BC327/328 is a PNP type RF switch and low power amplifier produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -50V, maximum collector-emitter reverse voltage is -45V, maximum emitter-base voltage is -5V, maximum collector current is -800mA, maximum collector power dissipation is 625mW, and maximum junction temperature is 150℃. Its typical storage temperature is -55℃ to 150℃.

BC337/338 is a NPN type silicon crystal transistor produced by Fairchild Semiconductor Corporation. Its maximum collector current is 800mA, the maximum collector-emitter voltage is 50V, the maximum emitter-base voltage is 5V, and the maximum package size is TO-92. It is suitable for AF-Driver stages and low power output stages.

This document provides the characteristics parameters of BC546/547/548/549/550 NPN Epitaxial Silicon Transistor, including absolute maximum ratings, electrical characteristics, test conditions, etc.

BC556/557/558/559/560 are PNP type transistors produced by FAIRCHILD. Its maximum collector-emitter reverse voltage is -65V, maximum collector-base reverse voltage is -80V, maximum emitter-base reverse voltage is -5V, maximum collector current is -100mA, and maximum power consumption is 500mW. The maximum working temperature is 150℃.

BC636 is a PNP type silicon transistor produced by Fairchild Semiconductor Corporation. It is mainly used in switch power supply and amplifier circuits.

This document describes the absolute maximum ratings and electrical characteristics of the BC63916 NPN epitaxial silicon transistor. The transistor has high voltage and current capabilities, making it suitable for switching and amplification applications.

BC640 is a PNP epitaxial silicon transistor for switching and amplifier applications, complementary to BC639. It features high voltage and current capacity, low saturation voltage drop, and high frequency characteristics.

This is a PDF file about BC807/BC808, introducing its electrical characteristics, absolute maximum ratings, application scenarios and other information.

BC817/BC818 NPN Epitaxial Silicon Transistor is a device suitable for AF-Driver stages and low power output stages for switching and amplifier applications.

BC846 - BC850 are NPN epitaxial silicon transistors suitable for switching and amplifier applications. They are suitable for automatic insertion in thick- and thin-film circuits. BC849 and BC850 are low noise. They complement the BC856 and BC860.

BC847BS is a NPN Multi-chip General Purpose Amplifier produced by Fairchild Semiconductor Corporation. It can be applied to general purpose amplifier applications at collector currents up to 200 mA

This document describes an NPN multi-chip general purpose amplifier device, designed for general purpose amplifier applications with a maximum collector current of 200mA. The device features a wide operating temperature range of -55°C to +150°C, and has high collector-emitter voltage and collector-base voltage.

This document describes the features and characteristics of the BC856-BC860 PNP Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. It is suitable for switching and amplifier applications, can be automatically inserted in thick and thin-film circuits, and has low noise. It is complementary to BC846.