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BC857S is a PNP multi-chip general purpose amplifier produced by FAIRCHILD SEMICONDUCTOR CORPORATION. Its maximum collector current is 200mA and its rated values are VCEO 45V, VCES 50V, VCBO 50V, VEBO 5.0V, and TJ 150°C
BCP51 is an NPN transistor with a maximum collector voltage of -45V, a maximum collector-emitter voltage of -45V, a maximum collector-base voltage of -45V, a maximum emitter-base voltage of -5V and a maximum collector current of -1.5A. Its operating temperature range is -55~150 degrees
This document describes the absolute maximum ratings and thermal characteristics of the BCP52 PNP general purpose amplifier. The device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents up to 1.0A.
The BCP53 is a PNP general purpose amplifier manufactured by Fairchild Semiconductor Corporation. This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A.
This document describes the absolute maximum ratings and thermal characteristics of the BCP54 NPN general purpose amplifier. This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents up to 1.2A.
The BCP55 is a NPN general purpose amplifier manufactured by Fairchild Semiconductor Corporation. It is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A.
BCP68 is an NPN general purpose amplifier designed for medium power amplifiers. It has a collector-emitter voltage of 20V and a collector current of 1A. Additionally, it has low saturation voltage and base-emitter voltage.
The BCP69 is a PNP general purpose amplifier designed for medium power amplifiers and switches with a maximum collector current of 1.0A. It features a collector-emitter voltage of -20V and a collector-base voltage of -30V.
BCV71 is a diode produced by Fairchild Semiconductor Corporation. Its characteristics include: maximum collector-emitter voltage of 60V, maximum collector-base voltage of 80V, maximum emitter-base voltage of 5.0V, maximum collector current of 500mA, and operating and storage temperature range of -55~+150°C.
BCW66G is a NPN transistor manufactured by Fairchild Semiconductor. It has a maximum collector current of 1 A, a maximum collector-emitter voltage of 45 V, a maximum collector-base voltage of 75 V, and a maximum emitter-base voltage of 5 V.
This document describes the absolute maximum ratings, thermal characteristics, and electrical characteristics of the BCW71 NPN general purpose amplifier. The device is designed for general purpose amplifier applications with a maximum collector current of 300mA.