Industrial

STB120NF10/STP120NF10 is a N-MOSFET produced by STMicroelectronics. It features a low RDS(on) of 0.009 Ω and is suitable for use as a power switch in telecommunications and computer applications.

STB11NM60FD-1 is ST's 600V N-channel MOSFET with a typical RDS(on) of 0.45 ohms, high dv/dt and avalanche capabilities, 100% avalanche tested, low input capacitance and gate charge, low gate input resistance, tight process control and high manufacturing yields.

STP11NM60A/STP11NM60AFP/STB11NM60A-1 is a N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET from ST company, with low RDS(on), high dv/dt, low input capacitance and gate charge, low gate input resistance.

This document introduces the MDmesh™ power MOSFET product series from ST, including the STP11NM60, STP11NM60FP, STB11NM60, and STB11NM60-1 models. These products have low on-resistance, high dv/dt, and excellent avalanche characteristics, making them suitable for increasing power density of high voltage converters, enabling system miniaturization and higher efficiency.

This document describes the features and characteristics of STP11NK50Z - STP11NK50ZFP STB11NK50Z N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, very good manufacturing repeatability, etc.

This document describes the features and characteristics of STP11NK40Z, STP11NK40ZFP, and STB11NK40Z, which are N-channel 400V power MOSFETs. These features include extremely low on-resistance, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge and intrinsic capacitances.

The document describes the features and characteristics of an N-channel 400V - 0.44Ω - 9.5A TO-220/TO-220FP PowerMESH™II power MOSFET. It has extremely high dv/dt capability, 100% avalanche tested, and introduces a new high voltage benchmark. The product is suitable for high current, high speed switching, switch mode power supplies, DC-AC converters for welding equipment and uninterruptible power supplies, and motor drivers.

STP11NB40 and STP11NB40FP are N-channel 400V power MOSFETs with an RDS(on) of 0.48Ω, extremely high dV/dt capability, 100% avalanche tested, very low intrinsic capacitances, and minimized gate charge. They are suitable for high current, high-speed switching, switch mode power supplies, DC-AC converters for welding equipment, uninterruptible power supplies, and motor drive applications.

This document describes the features and characteristics of the STP10NK80Z series N-channel 800V MOSFET, including extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

The STP10NK70Z/STP10NK70ZFP is a ST's N-channel 700V low resistance SuperMESH™ Power MOSFET, with typical RDS(on) of 0.75 Ohm, extremely high dv/dt capability, which is ideal for high current, high speed switching applications.

STB10NK60Z is a 600V-0.65Ω-10A N-channel Zener-Protected SuperMESH™ Power MOSFET. It features a typical RDS(on) = 0.65 Ω, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge and very low intrinsic capacitances. It is ideal for high current, high speed switching applications such as off-line power supplies, adaptors and PFC.

STP10NC50/STP10NC50FP is a N-channel high voltage MOSFET designed by STMicroelectronics, using the latest MESH OVERLAY process, it has the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. It is widely used in high-frequency, high-voltage switching circuits.

STGP10NB60SFP is a N-channel IGBT from STMicroelectronics. It has a maximum voltage of 600V and a maximum current of 10A. The package type is TO-220FP.

STP10NB50 / STP10NB50FP is a N - channel 500V/0.55Ω/10.6A power MOSFET produced by STMicroelectronics. It has low RDS(on), high dv/dt and low gate charge, and is used for high current, high frequency switching, switch mode power supplies, DC-AC converters, welding equipment and uninterruptible power supplies.

STP10NB20 is a high performance N-channel enhancement mode PowerMESH MOSFET designed by SGS-Thomson. Its features are RDS(on) as low as 0.3 Ω, extremely high dv/dt capability, 100% avalanche tested, very low intrinsic capacitances, and minimized gate charge.