Industrial

STMicroelectronics STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET is a power MOSFET launched by STMicroelectronics company. Its features are extremely low input capacitance and gate charge. It is suitable for use as the main switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications, and also for any applications with low gate drive requirements.

STB140NF75 STP140NF75 STB140NF75-1 is a N-CHANNEL 75V - 0.0065Ω -120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET. It features low on-resistance, rugged avalanche characteristics, and remarkable manufacturing reproducibility. It is suitable for high current, high switching speed, solenoid and relay drivers, as well as automotive 42V battery drivers.

The STB140NF55 STP140NF55 N-CHANNEL 55V - 0.0065 Ω - 80A TO-220/D²PAK STripFET™ II POWER MOSFET from STMicroelectronis features extremely low on-resistance (RDS(on)) and is suitable for a wide range of applications, including motor control, high current, switching applications and automotive environments.

The document describes the features and characteristics of a series of SuperMESH power MOSFET products produced by ST. These products have extremely low on-resistance, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, and very low intrinsic capacitance. They are suitable for high current, high-speed switching, offline power supplies, adapters and PFC, and lighting applications.

This document provides preliminary information on a new product developed by STMicroelectronics. The product is an N-channel power MOSFET with low on-resistance, gate charge, and reverse recovery charge. It is suitable for switch applications in a wide range of fields such as automotive, consumer, telecom, and industrial.

STP130NS04ZB is a N-channel MOSFET produced by ST company. Its features are RDS(on) typical value is 7mΩ, 100% Avalanche tested, low capacitance and gate charge, maximum junction temperature is 175°C.

STP12PF06 is a P-channel power MOSFET produced by STMicroelectronics. Its main feature is RDS(on) as low as 0.18 ohm, with excellent dv/dt capability, 100% avalanche tested, low gate charge, and can be used in motor control, DC-DC and DC-AC converters.

This document describes an N-channel power MOSFET with low on-resistance, fast switching, and built-in fast recovery diode. It is suitable for bridge topologies and zero-voltage switching phase-shift converters.

STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 550V @ Tjmax-0.30Ω - 12A TO-220/FP/D²/I²PAK Zener-Protected SuperMESH™MOSFET is a high-performance MOSFET with outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. This product is very suitable for increasing the power density of high voltage converters allowing system miniaturization and higher efficiencies.

The document describes the features and characteristics of ST's STB12NK80Z, STP12NK80Z, and STW12NK80Z N-channel 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247 Zener-Protected SuperMESH™ MOSFET. The products have extremely high dv/dt capability, improved ESD capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

The STP16CP596 is a monolithic, low voltage, low current 16-bit shift register designed for LED panel displays. It contains a 16-bit serial-in, parallel-out shift register and a 16-bit D-type storage register. The device features sixteen regulated current sources to provide a constant current of 3-50mA for driving the LEDs. The output current of the STP16CP596 can be adjusted through an external resistor to control the light intensity of the LEDs. It has a 16V output driving capability, allowing for the connection of more LEDs in series. The high clock frequency of 25 MHz meets the requirements of high volume data transmission. The 3.3V voltage supply is suitable for applications that interface with any 3.3V microcontroller. The TSSOP exposed pad package provides high thermal efficiency, with 2.5 times the heat dissipation capability compared to a standard TSSOP package.

STP12NK30Z is ST's N-CHANNEL 300V - 0.36Ω - 9A - TO-220 Zener-Protected SuperMESH™Power MOSFET, which has a very good dv/dt capability, extremely low intrinsic capacitances and very good manufacturing repeatability. It is suitable for applications such as lighting, off-line power supplies, adapters and PFC.

STP12A60 is a bidirectional triode thyristor produced by SemiWell Semiconductor. Its maximum reverse blocking voltage is 600V and its rated forward current is 12A. It has high commutation dv/dt characteristics and is suitable for AC switching applications, phase control applications, etc.