STP10NB50 / STP10NB50FP is a N - channel 500V/0.55Ω/10.6A power MOSFET produced by STMicroelectronics. It has low RDS(on), high dv/dt and low gate charge, and is used for high current, high frequency switching, switch mode power supplies, DC-AC converters, welding equipment and uninterruptible power supplies.
This document provides technical specifications for the STP10NB50 and STP10NB50FP N-channel PowerMESH MOSFETs. These devices feature a 500V drain-source voltage rating and a continuous drain current of 10.6A, available in TO-220 and TO-220FP packages.
The datasheet details absolute maximum ratings, electrical characteristics, thermal data, and dynamic performance. It includes typical application circuits for unclamped inductive loads and switching times, along with mechanical dimensions for both package types.
| Drain-source Voltage | 500 V |
|---|---|
| Continuous Drain Current (25°C) | 10.6 A |
| Package Types | TO-220, TO-220FP |
| Total Dissipation (25°C) | 135 W (TO-220), 40 W (TO-220FP) |
| Operating Junction Temperature | 150 °C |
The maximum gate-source voltage rating is +30V.
The typical static drain-source on-resistance is 0.55 ohms.
The maximum operating junction temperature is 150 °C.